Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes

CORRIGENDUM: A novel wavelength-adjusting method in InGaN-based light-emitting diodes

The pursuit of high internal quantum efficiency (IQE) for green emission spectral regime is referred as "green gap" challenge. Now researchers place their hope on the InGaN-based materials to develop high-brightness green light-emitting diodes. However, IQE drops fast when emission wavelength of InGaN LED increases by changing growth temperature or well thickness. In this paper, a new wavelengt...

A hole accelerator for InGaN/GaN light-emitting diodes

A hole modulator for InGaN/GaN light-emitting diodes

Evaluation of InGaN/GaN light-emitting diodes of circular geometry.

Blue GaN light emitting diodes (LEDs) in the shape of cuboids and circular disks have been fabricated by laser micromachining. The proposed circular geometry serves to enhance overall light extraction on a macro-scale and to improve uniformity of the emission pattern due to the rotational symmetry of the chip. Analysis of the chip shaping effect is carried out by ray-tracing simulations and fur...

Fabrication of InGaN-Based Vertical Light Emitting Diodes Using Electroplating

Group III–nitride semiconductors and their ternary solid solutions are very promising as the candidates for both short wavelength optoelectronics and power electronic devices (Nakamura et al. 1997; Nakamura et al. 1995; Lee, et al. 2010; Youn, et al. 2004). The AlGaN/GaN heterostructure field effect transistors (HFETs) have a great potential for future high-frequency and high-power applications...